SSF3117

SSF3117 www.DataSheet4U.com DESCRIPTION The SSF3117 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES ● MOSFET VDS = -20V,ID = -3.3A RDS(ON) < 180mΩ @ VGS=-1.8V RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V ● SCHOTTKY VR = 30V, IF = 2A, VF<0.53V @ 1.0A ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking and pin Assignment Application ●DC-DC conversion applications ●Load switch ●Power management DFN2X2-6L PACKAGE MARKING AND ORDERING INFORMATION Device Marking 3117 Device SSF3117 Device Package DFN2X2-6L Reel Size － Tape width － Quantity － ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current Schottky reverse voltage Continuous Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM VR IF PD TJ,TSTG 1.5 -55 To 150 -55 To 150 MOSFET -20 ±8 -3.3 -20 30 2 Schottky Unit V V A A V A W ℃ THERMAL CHARACTERISTICS MOSFET Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 54 ℃/W ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.1 SSF3117 www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter OFF CHAR...