DESCRIPTION
The SSF3428 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is...
DESCRIPTION
The SSF3428 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
● VDS = 30V,ID =6A RDS(ON) < 51mΩ @ VGS=4.5V RDS(ON) < 34mΩ @ VGS=10V
● High Power and current handing capability ● Lead free product ● Surface Mount Package
SSF3428
30V N-Channel
MOSFET
Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
●PWM applications ●Load switch ●Power management
TSOP-6 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3428
SSF3428
TSOP-6
-
Tape Width -
Quantity -
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage Drain Current-Continuous@ Current-Pulsed (Note 1)
VGS ID（25℃） ID（70℃）
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30 ±20
6 4.8 30 2 -55 To 150
Unit
V V A A A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
62.5 ℃/W
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Rev.2.0
SSF3428
30V N-Channel
MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current
BVDSS IDSS
VGS=0V ID=250μA VDS=30V,VGS=0V
Min Typ Max Unit
30 V 1 μA
Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold
Voltage
Drain-Source On...
