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SSF3604

Silikron Semiconductor

MOSFET

SSF3604 DESCRIPTION The SSF3604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This ...


Silikron Semiconductor

SSF3604

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Description
SSF3604 DESCRIPTION The SSF3604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. GENERAL FEATURES ● VDS = 30V,ID =18.5A RDS(ON) < 6.0mΩ @ VGS=4.5V RDS(ON) < 4.5mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size SSF3604 SSF3604 SOP-8 Ø330mm SOP-8 top view Tape width 12mm Quantity 2500 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS ID(25℃) Drain Current-Continuous@ Current-Pulsed (Note 1) ID(70℃) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 30 ±20 18.5 13 74 2.5 -55 To 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 50 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Min Typ Max 30 Unit V ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 SSF3604 Zero Gate Voltage Drain Current Gate-Body Leakage Curre...




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