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SSF3612 Datasheet

Part Number SSF3612
Manufacturers Silikron Semiconductor Co
Logo Silikron Semiconductor Co
Description MOSFET
Datasheet SSF3612 DatasheetSSF3612 Datasheet (PDF)

SSF3612 www.DataSheet4U.com DESCRIPTION The SSF3612 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. G D S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =11A RDS(ON) < 17mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Pow.

  SSF3612   SSF3612






Part Number SSF3612
Manufacturers GOOD-ARK
Logo GOOD-ARK
Description N-Channel MOSFET
Datasheet SSF3612 DatasheetSSF3612 Datasheet (PDF)

SSF3612 30V N-Channel MOSFET DESCRIPTION The SSF3612 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 30V,ID =11.6A RDS(ON) < 17mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package D G S Schematic Diagram Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power managemen.

  SSF3612   SSF3612







MOSFET

SSF3612 www.DataSheet4U.com DESCRIPTION The SSF3612 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. G D S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =11A RDS(ON) < 17mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking SSF3612 Device SSF3612 Device Package SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Limit 30 ±20 11 9 50 3.1 -55 To 150 Unit V V A A A W ℃ VDS VGS ID(25℃) ID(70℃) IDM PD TJ,TSTG Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 40 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Min 30 Typ Max Unit V ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.1 SSF3612 www.DataSheet4U.com Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage D.


2010-03-06 : KIA1117API00    KIA1117API15    KIA1117API18    KIA1117API25    KIA1117API28    KIA1117API33    KIA1117API50    KIA1117PI00    KIA1117PI15    M4C9   


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