DESCRIPTION
The SSF3616 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is...
DESCRIPTION
The SSF3616 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
● VDS = 30V,ID =9A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 18.5mΩ @ VGS=10V
● High Power and current handing capability ● Lead free product ● Surface Mount Package
SSF3616
30V N-Channel
MOSFET
D G
S Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
●PWM applications ●Load switch ●Power management
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3616
SSF3616
SOP-8
Ø330mm
Tape Width 12mm
Quantity 2500 units
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(25℃) ID(70℃)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30 ±25
9 7 40 2.5 -55 To 150
Unit
V V A
A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
62.5 ℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown
Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max Unit
30 V
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Rev.1.0
SSF3616
30V N-Channel
MOSFET
Zero Gate
Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold
Voltage
Drain-Source On-S...