SSF3626
www.DataSheet4U.com
DESCRIPTION
The SSF3626 uses advanced trench technology to provide excellent RDS(ON) and lo...
SSF3626
www.DataSheet4U.com
DESCRIPTION
The SSF3626 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram
GENERAL FEATURES
● VDS = 30V,ID =6.9A RDS(ON) < 51mΩ @ VGS=4.5V RDS(ON) < 35mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications ●Load switch ●Power management
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking SSF3626 Device SSF3626 Device Package SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol
Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range
Limit
30 ±20 6.9 30 2.8 -55 To 150
Unit
V V A A W ℃
VDS VGS ID IDM PD TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 62.5 ℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition
OFF CHARACTERISTICS Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current BVDSS IDSS VGS=0V ID=250μA VDS=30V,VGS=0V
Min
30
Typ
Max
Unit
V
1
μA
©Silikron Semiconductor CO.,LTD.
1
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v1.0
SSF3626
www.DataSheet4U.com
Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltag...