SSF3637S
DESCRIPTION
The SSF3637S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .Thi...
SSF3637S
DESCRIPTION
The SSF3637S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
● VDS =- 30V,ID =-10A RDS(ON) < 70mΩ @ VGS=-4.5V RDS(ON) < 45mΩ @ VGS=-10V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
D G
S Schematic diagram
Marking and pin Assignment
Application
●PWM applications ●Load switch ●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3637S
SSF3637S
SOP-8
Ø330mm
SOP-8 top view
Tape width 12mm
Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
ID(25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(70℃)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30 ±20 -6.6 -5.2 -30 3.1 -55 To 150
Unit
V V A A A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
75 ℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown
Voltage
BVDSS
VGS=0V ID=-250μA
Min Typ Max Unit
-30 V
©Silikron Semiconductor CO.,LTD.
1
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v1.1
SSF3637S
Zero Gate
Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold
Voltage
...