SSF4006

SSF4006 Feathers: ID =160A „ Advanced trench process technology BV=40V „ avalanche energy, 100% test Rdson=0.005Ω „ Fully characterized avalanche voltage and current Description: The SSF4006 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability SSF4006 TOP View (T0-220) and electrical parameter repeatability. SSF4006 is assembled in high reliability and qualified assembly house. Application: „ Commercial-industrial application Absolute Maximum Ratings Parameter ID@Tc=25ْ C ID@Tc=100ْC Continuous drain current,VGS@10V Continuous drain current,VGS@10V IDM Pulsed drain current ① PD@TC=25ْC Power dissipation Linear derating factor VGS EAS EAR dv/dt Gate-to-Source voltage Single pulse avalanche energy ② Repetitive avalanche energy Peak diode recovery voltage TJ TSTG Thermal Resistance Operating Junction and Storage Temperature Range Parameter Min. RθJC RθJA Junction-to-case Junction-to-ambient — — Max. 160 100 640 150 2.0 ±20 480 TBD 31 –55 to +150 Typ. Max. 0.83 — — 62 Units A W W/ْ C V mJ mJ v/ns ْC Units ْC/W Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS RDS(on) VGS(th) Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage IDSS Drain-to-Source leakage current Gate-to-Source forward leakage IGSS Gate-to-Source reverse leakage 40 ...