SSF4006
Feathers:
ID =160A
Advanced trench process technology
BV=40V
avalanche energy, 100% test
Rdson=0.005Ω
...
SSF4006
Feathers:
ID =160A
Advanced trench process technology
BV=40V
avalanche energy, 100% test
Rdson=0.005Ω
Fully characterized avalanche
voltage and current
Description:
The SSF4006 is a new generation of high
voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
SSF4006 TOP View (T0-220)
and electrical parameter repeatability. SSF4006 is assembled
in high reliability and qualified assembly house.
Application:
Commercial-industrial application
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C ID@Tc=100ْC
Continuous drain current,VGS@10V Continuous drain current,VGS@10V
IDM Pulsed drain current ①
PD@TC=25ْC
Power dissipation Linear derating factor
VGS EAS EAR dv/dt
Gate-to-Source
voltage Single pulse avalanche energy ②
Repetitive avalanche energy Peak diode recovery
voltage
TJ TSTG Thermal Resistance
Operating Junction and Storage Temperature Range
Parameter
Min.
RθJC RθJA
Junction-to-case Junction-to-ambient
— —
Max. 160 100 640 150 2.0 ±20 480 TBD 31
–55 to +150
Typ. Max. 0.83 — — 62
Units
A
W W/ْ C
V mJ mJ v/ns ْC
Units ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
BVDSS RDS(on) VGS(th)
Drain-to-Source breakdown
voltage Static Drain-to-Source on-resistance
Gate threshold
voltage
IDSS Drain-to-Source leakage current
Gate-to-Source forward leakage IGSS Gate-to-Source reverse leakage
40 ...