Main Product Characteristics
VDSS
-30V
RDS(on) 19mΩ(typ.)
ID -25A ①
TO-252
Features and Benefits
Advanced trenc...
Main Product Characteristics
VDSS
-30V
RDS(on) 19mΩ(typ.)
ID -25A ①
TO-252
Features and Benefits
Advanced trench
MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product
SSF4607D
30V P-Channel
MOSFET
D G
Marking and Pin Assignment
S Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V(Silicon Limited) Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation Drain-Source
Voltage Gate-to-Source
Voltage Operating Junction and Storage Temperature Range
Thermal Resistance
Max. -25 ① -20 ① -60 41 -30 ± 20 -55 to + 150
Symbol RθJC
RθJA
Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④
Typ. — — —
Max. 3 25 50
Units
A
W V V °C
Units ℃/W ℃/W ℃/W
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Rev.1.0
SSF4607D
30V P-Channel
MOSFET
Electrical Characteristics @TA=25℃ unless otherwise spe...