Main Product Characteristics:
VDSS
600V
RDS(on) 0.059ohm(typ.)
ID 47A
Features and Benefits:
High dv/dt and avala...
Main Product Characteristics:
VDSS
600V
RDS(on) 0.059ohm(typ.)
ID 47A
Features and Benefits:
High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
SSF47NS60H
TO247
Schematic diagram
Description:
The SSF47NS60H series
MOSFETs is a new technology，which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source
Voltage Gate-to-Source
Voltage Single Pulse Avalanche Energy @ L=40.2mH Avalanche Current @ L=20.6mH Operating Junction and Storage Temperature Range
Max. 47 29.7 142 208 3.12 ...
