SSF4N60

SSF4N60 Features ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement  100% avalanche tested  Gate charge minimized  Very low intrinsic capacitances  Very good manufacturing repeatability Vdss = 600V Id = 4A Rdson = 2.3Ω (typ.) Description The SSF4N60 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density. Application ■ High current, high speed switching ■ Lighting ■ Ideal for off-line power supply, adaptor, PFC SSF4N60 TOP View (TO220) Absolute Maximum Ratings Parameter ID@Tc=25 ْC Continuous Drain Current,VGS@10V ID@Tc=100ْC Continuous Drain Current,VGS@10V IDM Pulsed Drain Current ① PD@TC=2...