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SSF5506 Datasheet

Part Number SSF5506
Manufacturers Silikron Semiconductor
Logo Silikron Semiconductor
Description MOSFET
Datasheet SSF5506 DatasheetSSF5506 Datasheet (PDF)

                                 Main Product Characteristics: VDSS 55V RDS(on) ID 3.8mΩ(typ.) 140A Features and Benefits: TO-220  „ Advanced MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 175℃ operating temperature SSF5506  Marking and pin Assignment  Schematic diagram        Description: It utilizes the latest processing techniques to a.

  SSF5506   SSF5506






Part Number SSF5506
Manufacturers GOOD-ARK
Logo GOOD-ARK
Description N-Channel MOSFET
Datasheet SSF5506 DatasheetSSF5506 Datasheet (PDF)

Main Product Characteristics VDSS 55V RDS(on) 3.8mohm(typ.) ID 140A TO- 220 Features and Benefits  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature  Lead free product SSF5506 55V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench processing techn.

  SSF5506   SSF5506







MOSFET

                                 Main Product Characteristics: VDSS 55V RDS(on) ID 3.8mΩ(typ.) 140A Features and Benefits: TO-220  „ Advanced MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 175℃ operating temperature SSF5506  Marking and pin Assignment  Schematic diagram        Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications  Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH② Avalanche Current @ L=0.3mH② Operating Junction and Storage Temperature Range Max. 140 100 520 220 1.5 55 ± 20 735 70 -55 to + 175 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2013.08.13 www.silikron.com  Version : 1.1 page 1 of 8                                  SSF5506  Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④.


2016-09-22 : AP22N13GH-HF    SSPL6040    SSPL6040D    SSPL7508    SSPL7509    SSPL7510    SSS1004    SSS1004    SSS1206    SSS1206H   


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