SSF5508A

Main Product Characteristics: SSF5508A VDSS RDS(on) 55V 4.5mohm（Typ） ID 110A Features and Benefits: SSF5508A TOP View (TO263)  Advanced trench MOSFET process technology  Special designed for convertors and power controls  Ultra low on-resistance  175℃ operating temperature  High Avalanche capability and 100% tested Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating: Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① IDM Pulsed Drain Current② ISM Pulsed Source Current.(Body Diode) PD @TC = 25°C Power Dissipation③ Linear derating factor VDS Drain-Source Voltage VGS Gate-to-Source Voltage dv/dt Peak diode recovery voltage EAS IAR Single Pulse Avalanche Energy @ L=0.3mH② Avalanche Current @ L=0.3mH② TJ TSTG Operating Junction and Storage Temperature Range Max. 110 80 440 440 205 2 55 ±20 35 634 65 -55 to + 175 Units A W W/ Cْ V V v/ns mJ A °C Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Value 0.73 50 Unit ℃/W ℃/W ©Silikron Semiconductor CO.,LTD. 2011.01.12 www.silikron.com Version : 3.6 page 1of 6 SSF5508A Electrica...