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SSF5N60F Datasheet

Part Number SSF5N60F
Manufacturers Silikron
Logo Silikron
Description MOSFET
Datasheet SSF5N60F DatasheetSSF5N60F Datasheet (PDF)

                                 Main Product Characteristics: VDSS 600V RDS(on) 2ohm(typ.) ID 4A Features and Benefits: TO220F  „ Advanced trench MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 150℃ operating temperature SSF5N60F  Marking and pin Assignment      Schematic diagram    Description: It utilizes the latest trench processing tec.

  SSF5N60F   SSF5N60F






Part Number SSF5N60G
Manufacturers Silikron
Logo Silikron
Description MOSFET
Datasheet SSF5N60F DatasheetSSF5N60G Datasheet (PDF)

Main Product Characteristics: VDSS RDS(on) 600V 1.88Ω (typ.) ID 5A Features and Benefits: TO-251  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF5N60G Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the .

  SSF5N60F   SSF5N60F







Part Number SSF5N60D
Manufacturers Silikron
Logo Silikron
Description MOSFET
Datasheet SSF5N60F DatasheetSSF5N60D Datasheet (PDF)

Main Product Characteristics: VDSS RDS(on) 600V 1.88Ω (typ.) ID 5A Features and Benefits: TO-252  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF5N60D Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the .

  SSF5N60F   SSF5N60F







MOSFET

                                 Main Product Characteristics: VDSS 600V RDS(on) 2ohm(typ.) ID 4A Features and Benefits: TO220F  „ Advanced trench MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 150℃ operating temperature SSF5N60F  Marking and pin Assignment      Schematic diagram    Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications  Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Cur.


2017-06-28 : 2N3879    2N6288    2N5432    2N3487    2N3490    2N5494    2N5433    MMSZ4678    MMSZ4679    MMSZ4680   


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