Main Product Characteristics
VDSS RDS(on)
700V 1.3Ω (typ.)
ID 5A ①
Features and Benefits
TO-251S
High dv/dt and ...
Main Product Characteristics
VDSS RDS(on)
700V 1.3Ω (typ.)
ID 5A ①
Features and Benefits
TO-251S
High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
SSF5NS70GB
Marking and Pin Assignment
Schematic Diagram
Description:
The SSF5NS70GB series
MOSFETs is a new technology, which combines an innovative technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAR TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source
Voltage Gate-to-Source
Voltage Single Pulse Avalanche Energy @ L=22.4mH Avalanche Current @ L=22.4mH Operating Junction and Storage Temperature Range
Max. 5① 3.1① 15 50 0.4 700 ± 30 54 2.2 -55 to +150
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2013.03.14 www.silikron.com
Version : 1.0P
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SSF5NS70GB
Thermal Resistance
Symbol RθJC
RθJA
Characteristics Junction-to-case ③ Junction-to-ambient
(t ≤ 10s) ④
For TO-251S PKG For TO-251S PKG
Typ. —
—
Max. 2.5
75
Units ℃/W
℃/W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Sou...