Main Product Characteristics:
VDSS
60V
RDS(on) ID
2.7mΩ(typ.) 160A
Features and Be...
Main Product Characteristics:
VDSS
60V
RDS(on) ID
2.7mΩ(typ.) 160A
Features and Benefits:
TO-220
Advanced
MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSF6005
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source
Voltage Gate-to-Source
Voltage Single Pulse Avalanche Energy @ L=0.07mH② Avalanche Current @ L=0.07mH② Operating Junction and Storage Temperature Range
Max. 160 110 640 230 1.5 60 ± 20 350 100 -55 to + 175
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2013.08.13 www.silikron.com
Version : 1.1
page 1 of 8
SSF6005
Thermal Resistance
Symbol RθJC
RθJA
Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s...