SSF6646
60V Dual N-Channel MOSFET
DESCRIPTION
The SSF6646 uses advanced trench technology to provide excellent RDS(ON) ...
SSF6646
60V Dual N-Channel
MOSFET
DESCRIPTION
The SSF6646 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
GENERAL FEATURES
● VDS = 60V,ID =4.5A
RDS(ON) <75mΩ @ VGS=4.5V RDS(ON) <60mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product
● Surface Mount Package
Schematic Diagram Marking and Pin Assignment
APPLICATIONS
●PWM applications ●Load switch ●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF6646
SSF6646
SOP-8
Ø330mm
SOP-8 Top view
Tape Width 12mm
Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(25℃) ID(70℃)
IDM
Maximum Power Dissipation Operating Junction and Storage Temperature Range
PD TJ,TSTG
Limit
60 ±20
5 4.3 25 2.4 -55 To 175
Unit
V V A A A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
62.5 ℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown
Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max Unit
60 V
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Rev.1.1
SSF6646
60V Dual N-Channel
MOSFET
Zero Gate
Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold
Voltage
Drain-Source On-State Resistance
Forward Transconductance DYNAMIC CHARACTERISTICS (N...