SSF6808
68V N-Channel MOSFET
FEATURES Advanced trench process technology Ultra low Rdson, typical 6mohm High aval...
SSF6808
68V N-Channel
MOSFET
FEATURES Advanced trench process technology Ultra low Rdson, typical 6mohm High avalanche energy, 100% test Fully characterized avalanche
voltage and current Lead free product
ID =84A BV=68V R DS (ON) =8mohm
DESCRIPTION The SSF6808 is a new generation of middle
voltage and high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6808 is assembled in high reliability and qualified assembly house.
APPLICATIONS Power switching application
SSF6808 Top View (TO-220)
Absolute Maximum Ratings
Parameter
I DB
@T
B
B
c
=25ْ
B
C
Continuous drain current,VGS@10V
I
B
D
@T cB B
=100Cْ
B
Continuous drain current,VGS@10V
IDMB B Pulsed drain current ①
Power dissipation
P B
D
@T CB B
=25ْC
B
Linear derating factor
V GSB B dv/dt
Gate-to-Source
voltage Peak diode recovery
voltage
E ASB B E ARB B T JB B T STGB B
Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction and Storage Temperature Range
Max. 84 76 310 181 1.5 ±20 31 400 TBD
–55 to +175
Units
A
W W/ْ C
V v/ns mJ
ْC
Thermal Resistance
Parameter
R θJCB B R θJAB B
Junction-to-case Junction-to-ambient
Min. — —
Typ. 0.83 —
Max. — 62
Units ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min. Typ.
BV DSSB B RBDS(on)B VBGS(th)B
Drain-to-Source breakdown
voltage Static Drain-to-Source on-resistance Gate thre...