SSF6808A
68V N-Channel MOSFET
FEATURES Advanced trench process technology Ultra low Rdson, typical 5mohm High ava...
SSF6808A
68V N-Channel
MOSFET
FEATURES Advanced trench process technology Ultra low Rdson, typical 5mohm High avalanche energy, 100% test Fully characterized avalanche
voltage and current Lead free product
ID =84A BV=68V R DS (ON)=8mohm
DESCRIPTION The SSF6808A is a new generation of middle
voltage and high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6808A is assembled in high reliability and qualified assembly house.
APPLICATIONS Power switching application
SSF6808A Top View (TO-263)
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C Continuous drain current,VGS@10V
ID@Tc=100Cْ Continuous drain current,VGS@10V IDM Pulsed drain current ①
Power dissipation PD@TC=25ْC
Linear derating factor
VGS Gate-to-Source
voltage
dv/dt
Peak diode recovery
voltage
EAS EAR TJ TSTG
Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction and Storage Temperature Range
Max. 84 76 310 180 1.5 ±20 31 400 TBD
–55 to +175
Units
A
W W/ْ C
V v/ns mJ
ْC
Thermal Resistance Parameter
RθJC Junction-to-case RθJA Junction-to-ambient
Min. — —
Typ. 0.83 —
Max. — 62
Units ْC/W
Electrical Characteristics @T J=25 ْC (unless otherwise specified)
Parameter
Min. Typ.
BVDSS RDS(on) VGS(th)
Drain-to-Source breakdown
voltage Static Drain-to-Source on-resistance Gate threshold
voltage
68 — —5 2.0 ——
IDSS Drain-to-Source leakage current
——
Max. Units —V ...