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SSF6816

Silikron Semiconductor Co

High Power and current handing capability

www.DataSheet4U.com SSF6816 DESCRIPTION The SSF6816 uses advanced trench technology to provide excellent RDS(ON), low ...


Silikron Semiconductor Co

SSF6816

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Description
www.DataSheet4U.com SSF6816 DESCRIPTION The SSF6816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Schematic diagram GENERAL FEATURES ● VDS = 30V,ID = 8A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4.0V RDS(ON) < 20mΩ @ VGS=4.5V RDS(ON) < 17mΩ @ VGS=10V ESD Rating:2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package DFN2×5-6L top view Marking and pin Assignment PACKAGE MARKING AND ORDERING INFORMATION Device Marking 6816 Device SSF6816 Device Package DFN2×5-6L Reel Size Tape width Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit 30 ±12 8 45 1.7 -55 To 150 Unit V V A A W ℃ VDS VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 40 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=250μA VDS=30V,VGS=0V Min 30 Typ Max ...




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