Main Product Characteristics
VDSS
68V
RDS(on) 6.8mohm(typ.)
ID 84A ① Features and Benefits
TO-220
Advanced trenc...
Main Product Characteristics
VDSS
68V
RDS(on) 6.8mohm(typ.)
ID 84A ① Features and Benefits
TO-220
Advanced trench
MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Lead free product
SSF6908
68V N-Channel
MOSFET
Marking and Pin Schematic Diagram Assignment
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source
Voltage Gate-to-Source
Voltage Single Pulse Avalanche Energy @ L=0.3mH Avalanche Current @ L=0.3mH Operating Junction and Storage Temperature Range
Max. 84 ① 75 ① 336 181
1.2 68 ± 20 135 30 -55 to + 175
Units
A
W W/°C
V V mJ A °C
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Rev.1.0
SSF6908
68V N-Channel
MOSFET
Thermal Resistance
Symbol RθJC
RθJA
Characteristics Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④
Typ. —...