Main Product Characteristics:
VDSS RDS(on)
ID
650V 0.78Ω (typ.)
6A ①
TO-220F
Features and Benefits:
High dv/dt and...
Main Product Characteristics:
VDSS RDS(on)
ID
650V 0.78Ω (typ.)
6A ①
TO-220F
Features and Benefits:
High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
SSF6NS65UF
Marking and pin Assignment
Schematic diagram
Description:
The SSF6NS65UF series
MOSFETs is a new technology, which combines an innovative technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source
Voltage Gate-to-Source
Voltage Single Pulse Avalanche Energy @ L=22.5mH Avalanche Current @ L=22.5mH Operating Junction and Storage Temperature Range
Max. 6① 3.7① 18 29 0.23 650 ± 30 49.6 2.1 -55 to +150
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2013.08.15 www.silikron.com
Version : 1.0
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SSF6NS65UF
Thermal Resistance
Symbol RθJC RθJA
Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④
Typ. — —
Max. 4.3 80
Units ℃/W ℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdown
voltage
Static Drai...
