SSF6NS70G

Main Product Characteristics VDSS 700V RDS(on) 1.2Ω (typ.) ID 5.2A ① Features and Benefits TO-251 SSF6NS70G  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product SSF6NS70G/D/F 700V N-Channel MOSFET TO-252 SSF6NS70D TO-220F Schematic Diagram SSF6NS70F Description The SSF6NS70G/D/F series MOSFET is a new technology, which combines an innovative technology and advance process. This new technology achieves low RDS(ON), energy saving, high reliability and uniformity, superior power density and space saving. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ For TO-251/TO-252 package For TO-220F package Linear Derating Factor For TO-251/TO-252 package For TO-220F package Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=22.4mH Avalanche Current @ L=22.4mH Operating Junction and Storage Temperature Range Max. 5.2 ① 3.2① 15.6 50 31.2 0.4 0.25 700 ± 30 54 2.2 -55 to +150 Units A W W/°C V V mJ A °C www.goodark.com Page 1 of 9 Rev.1.0 SSF6NS70G/D/F 700V N-Channel MOSFET Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ For TO-251/TO-252 package For TO-220F package For TO-251/TO-252 package For TO-220F pack...