Main Product Characteristics
VDSS
700V
RDS(on) 0.95Ω (typ.)
ID 6A ①
TO-252 (DPAK)
Features and Benefits
High dv...
Main Product Characteristics
VDSS
700V
RDS(on) 0.95Ω (typ.)
ID 6A ①
TO-252 (DPAK)
Features and Benefits
High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Lead free product
SSF6NS70UD
700V N-Channel
MOSFET
Marking and Pin Assignment
Schematic Diagram
Description
The SSF6NS70UD series
MOSFET is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low RDS(ON), energy saving, high reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source
Voltage Gate-to-Source
Voltage Single Pulse Avalanche Energy @ L=100mH Avalanche Current @ L=100mH Operating Junction and Storage Temperature Range
Max. 6① 3.7① 18 33 0.264 700 ± 30 72 1.2 -55 to +150
Units
A
W W/°C
V V mJ A °C
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Rev.1.0
SSF6NS70UD
700V N-Channel
MOSFET
Thermal Resistance
Symbol RθJC RθJA
Characteristics Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④
Typ. — —
Max. 3.8 62
Units ℃/W ℃/W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-So...