SSF7510

SSF7510 Feathers: „ Advanced trench process technology „ Special designed for Convertors and power controls „ High density cell design for ultra low Rdson „ Fully characterized Avalanche voltage and current „ Avalanche Energy 100% test Description: The SSF7510 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 6.8mohm. Application: „ Power switching application ID=75A BV=75V Rdson=7mΩ (Typ.) Absolute Maximum Ratings Parameter ID@Tc=25 ْC Continuous drain current,VGS@10V ID@Tc=100ْC IDM Continuous drain current,VGS@10V Pulsed drain current ① PD@TC=25ْC Power dissipation Linear derating factor VGS dv/dt Gate-to-Source voltage Peak diode recovery voltage EAS Single pulse avalanche energy ② EAR TJ TSTG Repetitive avalanche energy Operating Junction and Storage Temperature Range SSF7510 TOP View (TO220) Max. 75 70 300 150 2.0 ±20 31 480 TBD –55 to +150 Units A W W/ ْC V v/ns mJ ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 0.83 — RθJA Junction-to-ambient — — 62 Electrical Characteristics @TJ=25 ْC(unless otherwise specified) ْC/W Parameter Min. Typ. Max. Units Test Conditions BVDSS RDS(on) VGS(th) gfs IDSS Drain-to-Source breakdown voltage 75 — Static Drain-to-Source on-resistance — 7 Gate threshold voltage 2.0 3.2 Forward transconductance - 58 —— Dra...