SSFN3903

Main Product Characteristics VBDSS -30V RDS(ON) 8.5mΩ ID -50A SSFN3903 30V P-Channel MOSFET D DD DD SG SS G S Features and Benefits PPAK3X3 „ Advanced MOSFET process technology „ Ideal for DC-DC converter, power management in portable battery, computer, printer, cellular and general purpose applications „ Low on-resistance with low gate charge „ Fast switching and reverse body recovery Schematic Diagram Description The SSFN3903 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications.. Absolute Maximum Ratings (TC=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25°C) Drain Current – Continuous (TC=100°C) Drain Current – Pulsed1 Power Dissipation (TC=25°C) Power Dissipation – Derate above 25°C Storage Temperature Range Operating Junction Temperature Range Symbol VDS VGS ID IDM PD TSTG TJ Value -30 ±20 -50 -32 -200 59 0.47 -55 to 150 -55 to 150 Unit V V A A A W W/°C °C °C Thermal Characteristics Parameter Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Symbol RθJA RθJC Typ. ----- Max. 62 2.1 Unit °C/W °C/W 1/6 SSFN3903 30V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise specified) Parameter Off Characteristics Drain-Source Breakdown Voltage BVDSS Temperatur...