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SSFT3904U Datasheet

Part Number SSFT3904U
Manufacturers GOOD-ARK
Logo GOOD-ARK
Description N-Channel MOSFET
Datasheet SSFT3904U DatasheetSSFT3904U Datasheet (PDF)

Main Product Characteristics VDSS 35V RDS(on) 3.0mohm(typ.) ID 110A Features and Benefits TO-220  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature  Lead free product SSFT3904U 35V N-Channel MOSFET SSFT3904U Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench proc.

  SSFT3904U   SSFT3904U






Part Number SSFT3904U
Manufacturers Silikron Semiconductor
Logo Silikron Semiconductor
Description MOSFET
Datasheet SSFT3904U DatasheetSSFT3904U Datasheet (PDF)

Main Product Characteristics: VDSS 35V RDS(on) 3.0mohm(typ.) ID 110A Features and Benefits: TO220  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature SSFT3904U SSFT3904U Marking and pin Assignment Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high c.

  SSFT3904U   SSFT3904U







N-Channel MOSFET

Main Product Characteristics VDSS 35V RDS(on) 3.0mohm(typ.) ID 110A Features and Benefits TO-220  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature  Lead free product SSFT3904U 35V N-Channel MOSFET SSFT3904U Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.1mH Avalanche Current @ L=0.1mH Operating Junction and Storage Temperature Range Max. 110 80 440 100 0.55 35 ± 20 320 80 -55 to + 175 Units A W W/°C V V mJ A °C www.goodark.com Page 1 of 7 Rev.1.1 SSFT3904U 35V N-Channel MOSFET Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-st.


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