SSFT4002

Main Product Characteristics: SSFT4002 VDSS RDS(on) 40V 2.1 mohm SSSSFFTT34900062 ID 220A Features and Benefits: Advanced trench MOSFET process technology  Special designed for Convertors and power controls  Ultra low on-resistance  175℃ operating temperature  High Avalanche capability and 100% tested TO220 Marking and pin Assignment Schematic diagram Description: It utilizes the latest trench processing techniques to achieve extremely low on resistance, fast switching speed and high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications Absolute max Rating: ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current① Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy② Avalanche Current @ L=0.3mH Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 220 145 85 850 220 1.5 ±24 1200 90 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V mJ A °C Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case Junction-to-ambient ④ Junction-to-Ambient (PCB mounted, steady-state)⑤ Value 0.62 60 40 Unit ℃/W ℃/W ℃/W ©Silikron Semiconductor CO.,L...