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SSG0410

SeCoS

N-Channel MOSFET

Elektronische Bauelemente SSG0410 N-Ch Enhancement Mode Power MOSFET 3.8 A, 100 V, RDS(ON) 158 m DESCRIPTION The SSG0...


SeCoS

SSG0410

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Description
Elektronische Bauelemente SSG0410 N-Ch Enhancement Mode Power MOSFET 3.8 A, 100 V, RDS(ON) 158 m DESCRIPTION The SSG0410 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic SOP-8 B MARKING DD D D 876 5 0410SC   123 4 SS SG  = Date Code Drain   Gate  Source A HG LD M C JK F N E REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD Operating Junction & Storage Temperature Range TJ, TSTG THERMAL RESISTANCE RATINGS Thermal Resistance Junction-ambient 3 (Max.) RθJA RATINGS 100 ±20 3.8 3.0 8 2.5 0.02 -55 ~ 150 50 UNIT V V A A A W W / °C °C °C / W http://www.SeCoSGmbH.com/ 01-Jun-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SSG0410 N-Ch Enhance...




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