Elektronische Bauelemente
SSG0410
N-Ch Enhancement Mode Power MOSFET 3.8 A, 100 V, RDS(ON) 158 m
DESCRIPTION
The SSG0...
Elektronische Bauelemente
SSG0410
N-Ch Enhancement Mode Power
MOSFET 3.8 A, 100 V, RDS(ON) 158 m
DESCRIPTION
The SSG0410 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
FEATURES
Simple Drive Requirement Low Gate Charge Fast Switching Characteristic
SOP-8
B
MARKING
DD D D
876 5
0410SC
123 4 SS SG
= Date Code
Drain
Gate
Source
A HG
LD M
C
JK F
N E
REF.
A B C D E F G
Millimeter
Min. Max.
5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25
1.27 TYP.
REF.
H J K L M N
Millimeter
Min. Max.
0.35 0.49 0.375 REF.
45° 1.35 1.75 0.10 0.25
0.25 REF.
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current 3
Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD
Operating Junction & Storage Temperature Range
TJ, TSTG
THERMAL RESISTANCE RATINGS
Thermal Resistance Junction-ambient 3 (Max.)
RθJA
RATINGS
100 ±20 3.8 3.0
8 2.5 0.02 -55 ~ 150
50
UNIT
V V A A A W W / °C °C
°C / W
http://www.SeCoSGmbH.com/
01-Jun-2010 Rev. A
Any changes of specification will not be informed individually.
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Elektronische Bauelemente
SSG0410
N-Ch Enhance...