SSG12N03

Elektronische Bauelemente SSG12N03 12A, 30V, RDS(ON) 9m N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG12N03 provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness. SOP-8 B FEATURES  Low on-resistance  Simple Drive Requirement  Double-N MosFET Package MARKING CODE 12N03SC    = Date Code PACKAGE INFORMATION Package MPQ SOP-8 3K Leader Size 13’ inch A HG LD M C JK F N E REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. SD SD SD GD ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Symbol VDS Ratings 30 Gate-Source Voltage VGS ±20 Continuous Drain Current 1 Pulsed Drain Current 2 Single Pulse Avalanche Energy 3 TA = 25°C TA = 70°C ID IDM EAS 12 8.2 52 130 Avalanche Current Power Dissipation 4 Maximum Junction to Ambient 1 Maximum Junction to Case 1 IAS PD RθJA RθJC 34 1.5 85 50 Operating Junction & Storage Temperature Range TJ, TSTG -55~150 Unit V V A A mJ A W °C / W °C / W °C http://www.SeCoSGmbH.com/ 23-Jan-2014 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SSG12N03 12A, 30V, RDS(ON) 9m N-Channel Enhancement...