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SSG4394N

SeCoS Halbleitertechnologie

N-Channel Enhancement Mode Power MOSFET

SSG4394N Elektronische Bauelemente 6.5A 150V, RDS(ON) 50mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A s...


SeCoS Halbleitertechnologie

SSG4394N

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Description
SSG4394N Elektronische Bauelemente 6.5A 150V, RDS(ON) 50mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. SOP-8 B L D M FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. A C N J K H G F E REF. A B C D E F G APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D D D D PACKAGE INFORMATION Package SOP-8 MPQ 2.5K Leader Size 13 inch S S G MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA = 25° C TA = 70° C ID IDM IS PD TJ, TSTG Ratings 150 Unit V V A A A A W W ° C ±20 6.5 5.5 50 4.6 3.1 2.2 -55~150 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 TA = 25° C TA = 70° C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS Maximu...




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