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SSG4424

SeCoS Halbleitertechnologie GmbH

Enhancement Mode Power MOSFET

SSG4424 13.8A, 30V,RDS(ON) 9m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Produ...


SeCoS Halbleitertechnologie GmbH

SSG4424

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Description
SSG4424 13.8A, 30V,RDS(ON) 9m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.40 0.90 0.19 0.25 45 o ruggedized device design, Ultra low on-resistance and cost-effectiveness. The SOP-8 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 0.35 0.49 1.27 Typ. 0.375 REF 6.20 5.80 0.25 3.80 4.00 4.80 5.00 0.10 0.25 Features * Low on-resistance * Simple drive requirement D 8 D 7 D 6 D 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D * Fast switching Characteristic Date Code 4424SC G 1 S 2 S 3 S 4 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current 1 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 30 ±20 13.8 11 50 2.5 0.02 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 50 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SSG4424 Elektronische Bauelemente 13.8A, 30V,RDS(ON) 9m£[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 oC Unless otherwise specified) Parameter D...




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