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SSG4502C

SeCoS

MOSFET

Elektronische Bauelemente SSG4502C N-Ch: 10 A, 30 V, RDS(ON) 16 m P-Ch: -8.5 A, -30 V, RDS(ON) 23 m N & P-Ch Enhanc...


SeCoS

SSG4502C

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Description
Elektronische Bauelemente SSG4502C N-Ch: 10 A, 30 V, RDS(ON) 16 m P-Ch: -8.5 A, -30 V, RDS(ON) 23 m N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,. printers, PCMCIA cards, cellular and cordless telephones FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SOP-8 saves board space  Fast switching speed  High performance trench technology PACKAGE INFORMATION Package MPQ SOP-8 2.5K LeaderSize 13’ inch SOP-8 B A HG LD M C JK F N E REF. A B C D E F G Millimeter Min. Max. 5.8 6.20 4.80 5.00 3.80 4.00 0° 8° 0.50 0.93 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.51 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S G S MAXIMUM RATINGS (TA = 25°C unless otherwise specified) G Parameter Symbol N- Ch P- Ch Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 Operating Junction & Storage Temperature Range VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM IS PD @ TA = 25°C PD @ TA = 70°C TJ, TSTG 30 -30 20 -20 10 -8.5 8.1 -6...




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