SSG4536C
Elektronische Bauelemente N-Ch: 7.1A, 30V, RDS(ON) 28 mΩ P-Ch: -6A, -30V, RDS(ON) 39 mΩ N & P-Ch Enhancement Mo...
SSG4536C
Elektronische Bauelemente N-Ch: 7.1A, 30V, RDS(ON) 28 mΩ P-Ch: -6A, -30V, RDS(ON) 39 mΩ N & P-Ch Enhancement Mode Power
MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount
MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
SOP-8
B
L
D M
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space Fast switching speed High performance trench technology
A C
N J H G
Millimeter Min. Max. 5.8 6.20 4.80 5.00 3.80 4.00 0° 8° 0.50 0.93 0.19 0.25 1.27 TYP.
K
F
E
REF. A B C D E F G
REF. H J K L M N
APPLICATION
DC-DC converters and power management in portable and battery-powered products such as computers,. printers, PCMCIA cards, cellular and cordless telephones
Millimeter Min. Max. 0.35 0.51 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF.
Top View
PACKAGE INFORMATION
Package SOP-8 MPQ 2.5K Leader Size 13 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Rating Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current
2 1 1
Symbol
VDS VGS TA = 25° C ID TA = 70° C IDM IS PD TA = 70° C
N-CH 30 ±20 7.1 5.8 20 1.3 2.1 1.3
P-CH -30 ±20 -6 -4.9 -20 -1.3
Unit
V V A A A A W W ° C
Continuous Source Current (Diode Conduction) Total Power Dissipation
1
TA = 25° C
Operating Junction & Storage Tem...