SSG4801
Elektronische Bauelemente -5 A, -30 V, RDS(ON) 50 m Dual-P Enhancement Mode Power MOSFET
RoHS Compliant Produc...
SSG4801
Elektronische Bauelemente -5 A, -30 V, RDS(ON) 50 m Dual-P Enhancement Mode Power
MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4801 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate
voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to from a bidirectional blocking switch.
SOP-8
B
L
D M
FEATURES
A
C N J
K
Simple Drive Requirement Lower On-resistance Low Gate Charge
H
G
F
E
MARKING
REF.
4801SS
= Date Code
A B C D E F G
Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP.
REF. H J K L M N
Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF.
PACKAGE INFORMATION
Package SOP-8 MPQ 2.5K LeaderSize 13’ inch
S1 D1
G1
D1 D2 D2
S2 G2
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Total Power Dissipation 1 Linear Derating Factor Operating Junction & Storage Temperature Range Thermal Resistance Junction-ambient (Max.)
Notes: 1. Surface Mounted on FR4 Board, t ≦ 10sec. 2. Pulse width ≦ 300 μs, duty cycle ≦ 2%
1
Symbol
VDS VGS TA = 25°C TA = 70°C TA = 25°C ID IDM PD TJ, TSTG RθJA
Ratings
-30 ±12 -5 -4.2 -30 2 0.016 -55 ~ 150 62.5
Unit
V V A A W W / °C °C °C / W
Thermal Resist...