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SSG4934N Datasheet

Part Number SSG4934N
Manufacturers SeCoS Halbleitertechnologie
Logo SeCoS Halbleitertechnologie
Description Dual N-Channel Mode Power MOSFET
Datasheet SSG4934N DatasheetSSG4934N Datasheet (PDF)

SSG4934N Elektronische Bauelemente 8.9 A, 30 V, RDS(ON) 58 mΩ Dual N-Channel Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and co.

  SSG4934N   SSG4934N






Dual N-Channel Mode Power MOSFET

SSG4934N Elektronische Bauelemente 8.9 A, 30 V, RDS(ON) 58 mΩ Dual N-Channel Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8 B L D M A C N FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. H G J K F E REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package SOP-8 MPQ 2.5K Leader Size 13 inch S G S G D D D D MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA = 25° C TA = 70° C ID IDM IS PD TJ, TSTG Ratings 30 ±20 8.9 7.3 30 2.6 2.1 Unit V V A A A A W Continuous Source Current (Diode Conduction) Total Power Dissipation 1 TA = 25° C TA = 70° C 1.3 -55 ~ 150 ° C Operating Junction & Storage Temperature Range Thermal Resistance Rating.


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