SSG4953

Elektronische Bauelemente SSG4953 -6 A, -30 V, RDS(ON) 45 m Dual-P Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4953 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to from a bidirectional blocking switch. FEATURES  Simple Drive Requirement  Lower On-resistance  Low Gate Charge MARKING 4953SS    = Date Code PACKAGE INFORMATION Package MPQ SOP-8 3K Leader Size 13’ inch SOP-8 B A HG LD M C JK F N E REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S1 D1 G1 D1 S2 D2 G2 D2 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Drain-Source Voltage Gate-Source Voltage Parameter Symbol VDS VGS Continuous Drain Current @ VGS=10V 1 Pulsed Drain Current 2 Single Pulse Avalanche Energy 3 TA = 25°C TA = 100°C ID IDM EAS Avalanche Current Total Power Dissipation 4 TA = 25°C IAS PD Operating Junction & Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Thermal Resistance Junction-Ambient 1 (Max.) RθJA Thermal Resistance Junction-Case 1 (Max.) RθJC Ratings -30 ±20 -6 -4 -12 108 19 1.5 -55 ~ 150 83 60 Unit V V A ...