SSG5509A

SSG5509A Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V, RDS(ON) 30 mΩ P-Ch: -4.8 A, -30 V, RDS(ON) 55 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG5509A uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SOP-8 B L D M FEATURES Lower Gate Charge RoHS Compliant H G A C N J K F E MARKING CODE REF. Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. 5509ASS = Date Code PACKAGE INFORMATION Package SOP-8 MPQ 3K Leader Size 13 inch A B C D E F G MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 Symbol VDS VGS TA=25℃ TA=70℃ ID IDM PD TJ, TSTG Ratings N-Ch P-Ch Unit V V A A A W °C W / °C 30 ±12 6.1 4.9 30 2 -55~150 0.016 -30 ±12 -4.8 -3.8 -30 Total Power Dissipation Operating Junction and Storage Temperature Range Linear Derating Factor Thermal Resistance Ratings Maximum Thermal Resistance Junction-ambient 3 RθJA 62.5 °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ...