SSG6612N
Elektronische Bauelemente 9.4 A, 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product ...
SSG6612N
Elektronische Bauelemente 9.4 A, 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power
MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount
MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8
B
L
D M
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology.
A
C N J
K
H
G
F
E
PACKAGE INFORMATION
Package SOP-8 MPQ 2.5K LeaderSize 13’ inch
REF. A B C D E F G
Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP.
REF. H J K L M N
Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF.
S S S G
D D D D
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 Operating Junction & Storage Temperature Range t ≦ 10 sec Steady State
1
Symbol
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM IS PD @ TA = 25°C PD @ TA = 70°C TJ, TSTG THERMAL RESISTANCE RATINGS
Ratings
30
Unit
V V A A A ...