SSG9973

SSG9973 3.9A, 60V,RDS(ON) 80m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description The SSG9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 6.20 5.80 0.25 0.40 0.90 0.19 0.25 45 o 0.375 REF 3.80 4.00 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 Features * Simple drive requirement * Low gate charge D1 8 D1 7 D2 6 D2 5 D1 0 o 8 o 1.35 1.75 Dimensions in millimeters D2 Date Code 9973SS G1 G2 1 S1 2 G1 3 S2 4 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1.2 3 3 Symbol VDS VGS ID@TA=25к ID@TA=70к IDM PD@TA=25к Ratings 60 ±20 3.9 2.5 20 2.0 0.016 Unit V V A A A W W /e C e C Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 Thermal Data Parameter Thermal Resistance Junction-ambient Max. 3 Symbol Rthj-a Ratings 62.5 Unit e C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Free Datasheet http://www.datasheet4u.com/ Page 1 of 4 SSG9973 3.9A, 60V,RDS(ON) 80m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 oC Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coe...