SSG9975
Elektronische Bauelemente 7.6A, 60V,RDS(ON) 21m£[
N-Channel Enhancement Mode Power Mos.FET
SOP-8
Description
...
SSG9975
Elektronische Bauelemente 7.6A, 60V,RDS(ON) 21m£[
N-Channel Enhancement Mode Power Mos.FET
SOP-8
Description
0.40 0.90 0.19 0.25
The SSG9975 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
45
6.20 5.80 0.25
o
0.375 REF
3.80 4.00
0.35 0.49
1.27Typ. 4.80 5.00 0.10~0.25
Features
* RoHS Compliant * Lower On-Resistance * High Breakdown
Voltage
Date Code
0 o 8
o
1.35 1.75
Dimensions in millimeters
D1 8
D1 7
D2 6
D2 5
D1
D2
9 975SS
G1
1 S1 2 G1 3 S2 4 G2
G2
S1
S2
Absolute Maximum Ratings
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1 3 3
Symbol
VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o o
Ratings
60
±25 7.6 6.1 30 2 0.016
Unit
V V A A A W
W/ C
o o
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max. Rthj-a
Ratings
62.5
o
Unit
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Free Datasheet http://www.datasheet4u.com/
Page 1 of 4
SSG9975
Elektronische Bauelemente 7.6A, 60V,RDS(ON) 21m£[
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 oC Unless otherwise specified)
Parameter
Drain-Source Breakdown
Voltage Breakdown
Voltage Temp....
