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SSH10N60A
advanced power MOSFET
Description
Advanced Power
MOSFET
FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSH10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 10 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Sy...
Fairchild
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