SSH10N80A

N-CHANNEL POWER MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 25µA (Max.) @ VDS = 800V Lower RDS(ON): 0.746Ω (Typ.) ABSOLUTE MAXIMUM RATINGS Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristics Drain-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Drain Current-Pulsed x Gate-to-Source Voltage Single Pulsed Avalanche Energy y Avalanche Current x Repetitive Avalanche Energy x Peak Diode Recovery dv/dt z Total Power Dissipation (TC = 25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds THERMAL RESISTANCE Symbol RθJC RθCS RθJA Characteristics Junction-to-Case Case-to-Sink Junction-to-Ambient SSH10N80A BVDSS = 800V RDS(ON) = 0.95Ω ID = 10A TO-3...