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SSH6N70 Datasheet

Part Number SSH6N70
Manufacturers Samsung Electronics
Logo Samsung Electronics
Description N-Channel Power MOSFET
Datasheet SSH6N70 DatasheetSSH6N70 Datasheet (PDF)

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  SSH6N70   SSH6N70






Part Number SSH6N70A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Advanced Power MOSFET
Datasheet SSH6N70 DatasheetSSH6N70A Datasheet (PDF)

Advanced Power MOSFET w w w .D t a FEATURES h S a t e e 4U . m o c SSH6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 6 A TO-3P Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.) 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=.

  SSH6N70   SSH6N70







N-Channel Power MOSFET

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2006-02-22 : D2020UK-P    D2020UK.02    D2020UK.01    D2084UK.01    AN6041    APT5085CN    APT4585CN    APT501R1CN    APT451R1CN    APT5085GN   


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