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SSH70N10A Datasheet

Part Number SSH70N10A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Advanced Power MOSFET
Datasheet SSH70N10A DatasheetSSH70N10A Datasheet (PDF)

Advanced Power MOSFET SSH70N10A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175ΟC Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.018 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 ΟC) Continuous Drain Current (TC=100 ΟC) Drain Current-P.

  SSH70N10A   SSH70N10A






Advanced Power MOSFET

Advanced Power MOSFET SSH70N10A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175ΟC Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.018 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 ΟC) Continuous Drain Current (TC=100 ΟC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt O2 O1 O1 O3 Total Power Dissipation (TC=25 ΟC) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8”from case for 5-seconds BVDSS = 100 V RDS(on) = 0.023 Ω ID = 70 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Value 100 70 49.2 280 +_ 20 1633 70 30 6.5 300 2.0 - 55 to +175 300 Units V A A V mJ A mJ V/ns W W/ ΟC ΟC Thermal Resistance Symbol R θJC R θCS R θJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -- 0.24 -- Max. 0.5 -40 Units ΟC /W Rev. B ©1999 Fairchild Semiconductor Corporation SSH70N10A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25ΟC unless otherwise specified) Symbol BVDSS ∆BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.


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