SSH8N80A

N-CHANNEL POWER MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 25µA (Max.) @ VDS = 800V Lower RDS(ON): 1.000Ω (Typ.) ABSOLUTE MAXIMUM RATINGS Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristics Drain-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Drain Current-Pulsed x Gate-to-Source Voltage Single Pulsed Avalanche Energy y Avalanche Current x Repetitive Avalanche Energy x Peak Diode Recovery dv/dt z Total Power Dissipation (TC = 25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds THERMAL RESISTANCE Symbol RθJC RθCS RθJA Characteristics Junction-to-Case Case-to-Sink Junction-to-Ambient SSH8N80A BVDSS = 800V RDS(ON) = 1.5Ω ID = 8A TO-3P 1 2 3 1. Gate 2. Drain 3. Source Value 800 8 5.1 32 ±30 444 8 24 2.0 240 1.92 −55 to +150 300 Units V A A V mJ A mJ V/ns W W/°C °C Typ. − 0.24 − Max. 0.52 − 40 Units °C/W  1999 Fairchild Semiconductor Corporation REV. B 1 SSH8N80A N-CHANNEL POWER MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage, Forward Gate-Source Leakage, Reverse ...