SSH8N90A

Advanced Power MOSFET SSH8N90A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 1.247 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 ΟC) Continuous Drain Current (TC=100 ΟC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 ΟC) Linear Derating Factor O2 O1 O1 O3 Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “from case for 5-seconds Thermal Resistance Symbol R θJC R θCS R θJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient BVDSS = 900 V RDS(on) = 1.6 Ω ID = 8 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Value 900 8 5.1 32 +_ 30 847 8 24 1.5 240 1.92 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W/ ΟC ΟC Typ. -- 0.24 -- Max. 0.52 -40 Units ΟC /W Rev. B ©1999 Fairchild Semiconductor Corporation SSH8N90A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 ΟC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Min. Typ. Max. Units Test Condition Drain-Source Breakdown Voltage Breakdown Voltage Temp...