Elektronische Bauelemente
SSI318-C
0.25A, 50V, RDS(ON) 1.6Ω
Dual N-Channel ENHANCEMENT MODE POWER MOSFET
RoHS Complian...
Elektronische Bauelemente
SSI318-C
0.25A, 50V, RDS(ON) 1.6Ω
Dual N-Channel ENHANCEMENT MODE POWER
MOSFET
RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SSI318-C is the highest performance trench N-Ch
MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SSI318-C meet the RoHS and Green Product requirement with full function reliability approved.
SOT-563
A
B
FEATURES
Reliable and Rugged Green Device Available ESD Protection
MARKING
318
PACKAGE INFORMATION
Package
MPQ
SOT-563
3K
Leader Size 7 inch
J D
CF
GH E
REF.
A B C D E
Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30
- 0.05
REF.
F G H J
Millimeter Min. Max. 0.09 0.16 0.45 0.55 0.17 0.27
0.10 0.30
ORDER INFORMATION
Part Number
Type
SSI318-C
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current 1, @VGS=4.5V Pulsed Drain Current 2
TA=25°C TA=85°C
ID IDM
Power Dissipation
TA=25°C
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient 1
RθJA
Ratings 50 ±20 0.25
0.18 1
150 -55~150
833
Unit V V
A
A mW °C
°C/W
http://www.SeCoSGmbH.com/
01-Apr-2020 Rev. B
Any changes of specification will not be informed individually.
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Elektronische Bauelemente
SSI318-C
0.25A, 50V, RDS(ON) 1...