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SSI318-C

SeCoS

Dual N-Channel MOSFET

Elektronische Bauelemente SSI318-C 0.25A, 50V, RDS(ON) 1.6Ω Dual N-Channel ENHANCEMENT MODE POWER MOSFET RoHS Complian...


SeCoS

SSI318-C

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Description
Elektronische Bauelemente SSI318-C 0.25A, 50V, RDS(ON) 1.6Ω Dual N-Channel ENHANCEMENT MODE POWER MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SSI318-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSI318-C meet the RoHS and Green Product requirement with full function reliability approved. SOT-563 A B FEATURES Reliable and Rugged Green Device Available ESD Protection MARKING 318 PACKAGE INFORMATION Package MPQ SOT-563 3K Leader Size 7 inch J D CF GH E REF. A B C D E Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 - 0.05 REF. F G H J Millimeter Min. Max. 0.09 0.16 0.45 0.55 0.17 0.27 0.10 0.30 ORDER INFORMATION Part Number Type SSI318-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1, @VGS=4.5V Pulsed Drain Current 2 TA=25°C TA=85°C ID IDM Power Dissipation TA=25°C PD Operating Junction & Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Thermal Resistance Junction-Ambient 1 RθJA Ratings 50 ±20 0.25 0.18 1 150 -55~150 833 Unit V V A A mW °C °C/W http://www.SeCoSGmbH.com/ 01-Apr-2020 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SSI318-C 0.25A, 50V, RDS(ON) 1...




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