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SSIG20N135H

Silikron Semiconductor

MOSFET


Description
Main Product Characteristics: VCES 1350V VCE(sat) 1.9V (typ.) ID 20A @ TC = 100°C Features and Benefits:  Advanced Trench-FS Process Technology  Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A  Fast Switching  High Input Impedance  Pb- Free Product  Power Switch Circuit of Induction Cooker TO-247 SSIG20N135H Schematic diagram ...



Silikron Semiconductor

SSIG20N135H

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