SSM6J206FE

SSM6J206FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J206FE ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 320 mΩ (max) (@VGS = -1.8 V) Ron = 186 mΩ (max) (@VGS = -2.5 V) Ron = 130 mΩ (max) (@VGS = -4.0 V) www.DataSheet4U.com Unit: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating -20 ±8 -2 -4 500 150 −55 to 150 Unit V V A mW °C °C ES6 1, 2, 5, 6 : Drain 3 4 : Gate : Source Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) JEDEC JEITA TOSHIBA ― ― 2-2N1A Weight: 3 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Drain–source breakdown voltage Drain cutoff current Gate...